Overview
The 8 inch sapphire substrate is a precision-engineered wafer designed for semiconductor and optoelectronic manufacturing.
It is made from single crystal aluminum oxide (Al₂O₃) with electronic-grade purity above 99.99%.
This wafer provides excellent flatness, high thermal conductivity, and superior mechanical strength.
Both SSP (single side polished) and DSP (double side polished) types are available to fit diverse process needs.
8 Inch Sapphire Wafer Specification
| Parameters | Specifications |
| Material | High Purity Single Crystal Al2O3 |
| Crystal Growth Method | Kyropoulos (KY) Method |
| Orientation | C-plane (0001) (Off-axis available) |
| Diameter | 200.0 ± 0.2 mm |
| Thickness | 500 – 1500 um ± 25 um (Customizable) |
| Notch Orientation | A-plane |
| TTV | ≤ 5 um |
| Bow | ≤ 25 um |
| Warp | ≤ 80 um |
| Surface Finish (Front) | Epi-ready, CMP Polished, Ra≤ 0.3 nm |
| Surface Finish (Back) | Epi-ready, CMP Polished, Ra≤ 0.3 nm |
| Edge Profile | SEMI Standard Bevel |
| Cleanliness | Class 100 Cleanroom Packed |
| Packaging | 8 inch Cassette (≤25 pcs) |
Uncompromising Cleanliness: State-of-the-Art AOI Inspection & Ultra-Clean Processing
For 8-inch sapphire substrates destined for Micro-LED, GaN-on-Sapphire power devices, or high-frequency RFICs, surface cleanliness is not just a requirement—it is the foundation of device yield. At MinnOptics, we understand that sub-micron particles or trace metal contamination can derail entire epitaxial growth processes.
We invite you to watch our advanced fully Automated Optical Inspection (AOI) and cleaning verification process. Our factory utilizes cutting-edge, cleanroom-integrated AOI systems that perform 100% surface scanning of every wafer. This allows us to detect, classify, and quantify defects and particles down to the nanometer scale with absolute precision.
Our Commitment to Your Yield:
- Epi-Ready Quality: Advanced multi-stage cleaning in a Class 100 (ISO 5) environment ensures surfaces are completely free of organic and inorganic residues.
- Ultra-Low Particle Counts: Tight control over particle specifications (<0.3um or custom requirements) verified by 100% AOI scanning.
- Minimal Metal Contamination: Rigorous chemical processing guarantees ultra-low metal ion concentrations (at the ppb level), preventng cross-contamination in critical semiconductor lines.
- Full Traceability: Detailed AOI inspection maps and metrology data are generated for every batch, providing you with full confidence in wafer integrity before they enter your epitaxy tools.
Material and Crystal Quality
Crystal Type
Grown by Kyropoulos methods to ensure high crystalline uniformity.
No bubbles, inclusions, or grain boundaries.
Chemical Composition
High purity Al₂O₃ with low trace metallic contamination.
This supports high-yield epitaxial growth and stable optical transmission.
Orientation Options
Standard: C-plane (0001).
Optional: A-plane, R-plane, or M-plane available for specific deposition or optical alignment.
Surface Quality
Polished using advanced CMP technology.
Surface roughness (Ra) ≤ 0.3 nm on DSP polished sides.
Excellent parallelism and thickness uniformity for thin-film growth.
Performance Advantages
High Thermal Conductivity
Sapphire efficiently transfers heat, reducing thermal stress in GaN or AlN devices.
Strong Mechanical Properties
With high hardness and fracture strength, it maintains structural integrity through thermal cycling and CMP.
Optical and Electrical Stability
Transparent from ultraviolet to infrared.
Chemically inert and electrically insulating, making it ideal for optoelectronic devices.
Dimensional Precision
Low TTV and bow improve wafer planarity, supporting accurate lithography and epitaxy.
Consistent Quality
Each wafer undergoes automatic metrology inspection and defect mapping.
Uniform results ensure repeatable performance across batches.
Applications
- Semiconductors: GaN-on-sapphire, SiC-on-sapphire, and compound semiconductor epitaxy.
- LED Production: Blue, UV, and high-brightness LED chips.
- RF Components: GaN RF amplifiers and power modules.
- Optical Systems: Windows, laser substrates, optical coatings.
- Sensor Devices: Infrared detectors, MEMS components, and piezoelectric transducers.
- Research: Wafer-scale materials testing and wide bandgap development.
Customization and Services
- Thickness available from 500 µm to 1200 µm.
- Orientation angle tolerance ≤ 0.5°.
- Bevel, edge rounding, or chamfer per SEMI standards.
- SSP, DSP, or etched surface finish available.
- Full inspection reports and traceable batch control.
Packaging is compliant with semiconductor-grade handling standards to prevent contamination and mechanical damage.
Looking for larger diameters?
Check our 12 Inch Sapphire Wafers for next-gen semiconductor manufacturing.
Frequently Asked Questions
Q1: Can you customize the thickness, off-angle, or edge profile of the wafers?
Yes. Beyond standard C-plane substrates, our factory engineering team can tailor specifications to match your exact epitaxial growth or semiconductor processing needs. This includes specific off-angles, custom thicknesses, SEMI-standard edge profiling (beveling), and laser marking for full traceability.
Q2: What are the primary applications for your 8-inch C-plane sapphire substrates?
These large-format substrates are engineered for advanced microelectronic devices, high-power LED epitaxial growth, RF/microwave integrated circuits (Silicon-on-Sapphire technology), and as high-performance carrier wafers in semiconductor processing. Their exceptional thermal conductivity, electrical insulation, and structural stability significantly optimize yields in next-generation device manufacturing.
