4 Inch DSP Sapphire Wafer Carrier for Micro LED

  • Wafer Diameter: 100 ± 0.2 mm

  • Thickness: 650 ± 15 µm

  • Orientation: C-Plane ± 0.3°

  • Primary Flat Length: 30 ± 1 mm

  • Polishing: Double Side Polished (DSP)

  • Roughness (Ra): < 0.3 nm

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100mm Double Side Polished Sapphire Substrate

Accelerate your optoelectronics fabrication with our high-grade 100mm (4-inch) sapphire carrier substrates. Recognized as a staple material across global semiconductor markets, this specific DSP configuration is heavily relied upon by top-tier fabs worldwide for handling ultra-thin layers during mass transfer, temporary bonding, and back-end processing.

Core Material Specifications

To eliminate variations in your production line, every substrate is manufactured to rigorous dimensional and crystallographic tolerances.

  • Wafer Diameter: 100 ± 0.2 mm

  • Thickness: 650 ± 15 µm

  • Orientation: C-Plane ± 0.3°

  • Primary Flat Length: 30 ± 1 mm

  • Polishing: Double Side Polished (DSP)

  • Roughness (Ra): < 0.3 nm

Global Supply & Surface Preparation

Because this 650µm specification is highly sought after by global display and semiconductor manufacturers, we maintain a massive, ready-to-ship inventory in our facilities. This allows us to offer exceptionally short lead times for both prototyping and high-volume production orders worldwide.

To match your cleanroom requirements, we provide tailored surface preparation:

  • Standard Processing: Industrial ultrasonic cleaning.

  • Advanced Processing: Semiconductor-grade CRC-100 cleaning is available, delivering an ultra-clean, particle-controlled surface optimal for direct wafer bonding.

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